公开(公告)号：US20240145012A1

公开(公告)日：2024-05-02

申请号：US18320409

申请日：2023-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghan Lee ,  Bumjun Kim ,  Bodon Jeong

IPC: G11C16/12 ,  G11C16/04 ,  G11C16/30

CPC classification number: G11C16/12 ,  G11C16/0433 ,  G11C16/30

Abstract: A memory device of a storage device includes a memory cell array divided into a plurality of regions including a first region and a second region. The device controller is configured to control the storage device so as to allow the memory device to program first data into the first region using a first initial program voltage, and to program second data into the second region using a second initial program voltage having a different magnitude from the first initial program voltage.