公开(公告)号：US20230058328A1

公开(公告)日：2023-02-23

申请号：US17739583

申请日：2022-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haemin LEE ,  Byoung-Taek KIM ,  Hyeonjoo SONG

IPC: H01L23/535 ,  H01L27/11582 ,  H01L27/11573

Abstract: Disclosed are three-dimensional (3D) semiconductor memory devices and electronic system including the same. The 3D semiconductor memory device may include a substrate including first and second regions, a stack structure including interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate and having a stepwise structure on the second region, a mold structure adjacent to the stack structure on the first region and including interlayer dielectric layers and sacrificial layers alternately and repeatedly stacked on the substrate, a first separation structure crossing the stack structure and extending along a first direction from the first region toward the second region, and a second separation structure crossing the mold structure and extending in the first direction on the first region. A level of a top surface of the first separation structure may be higher than a level of a top surface of the second separation structure.