公开(公告)号：US20250021025A1

公开(公告)日：2025-01-16

申请号：US18659932

申请日：2024-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngho HWANG ,  Sanghyun LIM ,  Youngkyun IM ,  Jaehong LIM ,  Chulmin CHO ,  Seok HEO

IPC: G03F7/00 ,  G03F7/16 ,  G03F7/32

Abstract: A substrate processing method includes: performing a first post-exposure baking process on a photoresist layer that was previously exposed to for extreme ultraviolet (EUV) exposed to EUV; developing the photoresist layer using a first developing solution having a first temperature; performing a second post-exposure baking process on the photoresist layer; developing the photoresist layer using a second developing solution having a second temperature, higher than the first temperature; and forming a photoresist pattern by performing a hard baking process on the photoresist layer.

公开(公告)号：US20240155741A1

公开(公告)日：2024-05-09

申请号：US18306570

申请日：2023-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulmin CHO ,  Seunghwan KO ,  Wooseop SHIN ,  Minwoo KIM ,  Kyoungwhan OH

IPC: H05B3/34 ,  H05B3/12 ,  H05B3/54

CPC classification number: H05B3/34 ,  H05B3/12 ,  H05B3/54 ,  H05B2203/002

Abstract: A substrate processing apparatus includes a chamber providing a space configured to process a substrate and a heating plate arranged within the chamber, the heating plate including a substrate plate configured to support the substrate and having a first region, a second region and a third region sequentially arranged in a radial direction from a center of the substrate plate, and a liquid metal pattern patterned on the substrate plate and extending on the first region, the second region and the third region, the substrate plate being stretchable.

公开(公告)号：US20250031281A1

公开(公告)日：2025-01-23

申请号：US18389721

申请日：2023-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun LIM ,  Youngho HWANG ,  Juno PARK ,  Kyoungwhan OH ,  Youngkyun IM ,  Jaehong LIM ,  Chulmin CHO ,  Seok HEO

IPC: H05B3/26 ,  G03F7/00

Abstract: A substrate supporting member and a substrate processing apparatus including the same are provided. The substrate supporting member includes a plate having at least one heating zone. A heating member is on a first surface of the plate and located in the at least one heating zone. The heating member extends along a circumferential direction of the plate and is configured to heat a substrate supported by the plate. A first electrode is on the first surface of the plate and is connected to an inner side surface of the heating member. A second electrode is on the first surface of the plate and is connected to an outer side surface of the heating member. The heating member has a stair-step configuration such that a thickness of the heating member increases from the second electrode toward the first electrode.