公开(公告)号：US20220328515A1

公开(公告)日：2022-10-13

申请号：US17522175

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeyong KIM ,  Shin Hum CHO ,  Joohyung KANG ,  Eunsong LEE

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor device includes insulation patterns spaced apart from each other on a substrate in a first direction that is substantially perpendicular to an upper surface of the substrate, gate electrodes spaced apart from each other in the first direction, and a channel extending in the first direction through the insulation patterns and the gate electrodes on the substrate. Each insulation pattern may extend in a second direction that is parallel to the upper surface of the substrate. Each insulation pattern may include boron nitride (BN). Each gate electrode may extend in the second direction between neighboring insulation patterns.