公开(公告)号：US20230163073A1

公开(公告)日：2023-05-25

申请号：US17576007

申请日：2022-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： GILHWAN SON ,  HOONSEOK SEO ,  SAEHAN PARK ,  BYOUNGHAK HONG ,  KANG-ILL SEO

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/5286 ,  H01L21/76898 ,  H01L23/535

Abstract: Methods of forming an integrated circuit devices may include forming a transistor on a first surface of a substrate. The transistor may include an active region, a source/drain region contacting the active region and a gate electrode on the active region. The methods may also include forming a conductive wire that is electrically connected to the source/drain region, forming a trench extending through the substrate by etching a second surface of the substrate, which is opposite the first surface of the substrate, and forming a power rail in the trench. The power rail is electrically connected to conductive wire.