公开(公告)号：US20230047840A1

公开(公告)日：2023-02-16

申请号：US17503486

申请日：2021-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGYOUNG LEE ,  SAEHAN PARK

IPC: H01L29/786 ,  H03B5/12

Abstract: Cross-coupled structures are provided. Cross-coupled structures may include a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor, the second transistor, and the fourth transistor may be spaced apart from each other in a first direction, and the third transistor and the second transistor may be stacked in a second direction that is perpendicular to the first direction. The third transistor and the second transistor may include a common gate structure, a first portion of the common gate structure may be a gate structure of the second transistor, and a second portion of the common gate structure may be a gate structure of the third transistor.

公开(公告)号：US20230163073A1

公开(公告)日：2023-05-25

申请号：US17576007

申请日：2022-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： GILHWAN SON ,  HOONSEOK SEO ,  SAEHAN PARK ,  BYOUNGHAK HONG ,  KANG-ILL SEO

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/5286 ,  H01L21/76898 ,  H01L23/535

Abstract: Methods of forming an integrated circuit devices may include forming a transistor on a first surface of a substrate. The transistor may include an active region, a source/drain region contacting the active region and a gate electrode on the active region. The methods may also include forming a conductive wire that is electrically connected to the source/drain region, forming a trench extending through the substrate by etching a second surface of the substrate, which is opposite the first surface of the substrate, and forming a power rail in the trench. The power rail is electrically connected to conductive wire.