公开(公告)号：US20250045104A1

公开(公告)日：2025-02-06

申请号：US18409286

申请日：2024-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibeen JUNG ,  Minkyu KIM ,  Hankyoo LEE ,  Namhoon KIM ,  Byeonghui KIM ,  Jisoo KIM ,  Hyunkyo OH

IPC: G06F9/50 ,  G06F1/324

Abstract: A storage device includes at least one nonvolatile memory device, and a controller controlling the at least one nonvolatile memory device. The controller includes a parameter storage storing a power parameter indicating a clock value of each of internal configurations for each power state. The power parameter is a value derived by performing machine learning considering performance, peak power, and average power.