公开(公告)号：US20210118516A1

公开(公告)日：2021-04-22

申请号：US17113451

申请日：2020-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo OH ,  Sangkwon MOON

IPC: G11C16/34 ,  G11C16/16 ,  G11C16/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.

公开(公告)号：US20240176700A1

公开(公告)日：2024-05-30

申请号：US18512613

申请日：2023-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjoo SEO ,  Youngdeok SEO ,  Sangkwon MOON ,  Hyunkyo OH ,  Hee-Tai OH ,  Heewon LEE ,  Jisoo KIM

IPC: G06F11/10 ,  G06F11/07

CPC classification number: G06F11/1068 ,  G06F11/076

Abstract: An operation method of a storage controller, which is configured to control a nonvolatile memory device, includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level; determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value; and selectively skipping or performing a next instance of the respective reliability operation based on the determination result.

公开(公告)号：US20210366562A1

公开(公告)日：2021-11-25

申请号：US17395872

申请日：2021-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo OH ,  Jinbaek SONG ,  Kangho ROH

IPC: G11C16/34 ,  G11C16/26 ,  G06N3/04 ,  G06K9/62 ,  G11C16/16

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US20220155971A1

公开(公告)日：2022-05-19

申请号：US17393643

申请日：2021-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo OH ,  Sanghyun CHOI ,  Kangho ROH

IPC: G06F3/06

Abstract: A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

公开(公告)号：US20210050067A1

公开(公告)日：2021-02-18

申请号：US16819374

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo OH ,  Jinbaek SONG ,  Kangho ROH

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/16 ,  G06K9/62 ,  G06N3/04

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US20250068559A1

公开(公告)日：2025-02-27

申请号：US18590574

申请日：2024-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Jinyoung LEE ,  Jisoo KIM ,  Sangkwon MOON ,  Hyunkyo OH ,  Donghoo LIM ,  Jin gu JEONG

IPC: G06F12/02

Abstract: A storage device includes a non-volatile memory device configured to store fast cell information obtained from a threshold voltage distribution formed through a one-shot program for memory cells; and a storage controller configured to read the fast cell information from the non-volatile memory device during booting or initialization to perform mapping a fast cell area based on a fast cell management policy, wherein the fast cell information is acquired through the one-shot program performed in a test stage or a mass production evaluation stage, and is stored in the non-volatile memory device before a firmware of the storage controller is executed.

公开(公告)号：US20230187002A1

公开(公告)日：2023-06-15

申请号：US17893476

申请日：2022-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuna KIM ,  Woohyun KANG ,  Youngdeok SEO ,  Hyunkyo OH ,  Donghoo LIM

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C16/3495 ,  G11C16/3404 ,  G11C16/26

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

公开(公告)号：US20250045104A1

公开(公告)日：2025-02-06

申请号：US18409286

申请日：2024-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibeen JUNG ,  Minkyu KIM ,  Hankyoo LEE ,  Namhoon KIM ,  Byeonghui KIM ,  Jisoo KIM ,  Hyunkyo OH

IPC: G06F9/50 ,  G06F1/324

Abstract: A storage device includes at least one nonvolatile memory device, and a controller controlling the at least one nonvolatile memory device. The controller includes a parameter storage storing a power parameter indicating a clock value of each of internal configurations for each power state. The power parameter is a value derived by performing machine learning considering performance, peak power, and average power.

公开(公告)号：US20240168674A1

公开(公告)日：2024-05-23

申请号：US18127922

申请日：2023-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibeen JUNG ,  Han Kyoo LEE ,  Byeonghui KIM ,  Hyunkyo OH ,  Sungmin JANG

IPC: G06F3/06

CPC classification number: G06F3/0653 ,  G06F3/061 ,  G06F3/0656 ,  G06F3/0679

Abstract: A throttling method for a storage device is provided. The throttling method includes: receiving a write command from a host; identifying, using a first machine learning model, a throttling delay time; transmitting a completion message to the host according to the throttling delay time; collecting weights of the first machine learning model and performance information of the storage device corresponding to the weights; learning the weights and the performance information to generate an objective function indicating a relationship between the weights and the performance information using a second machine learning model of a weight learning device; selecting a weight corresponding to a maximum performance using the objective function; and updating the first machine learning model with the weight.

公开(公告)号：US20230086157A1

公开(公告)日：2023-03-23

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Youngdeok SEO ,  Hyuna KIM ,  Hyunkyo OH ,  Donghoo LIM

IPC: G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.