公开(公告)号：US20230011088A1

公开(公告)日：2023-01-12

申请号：US17705343

申请日：2022-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euibok Lee ,  Rakhwan Kim ,  Wandon Kim ,  Sunyoung Noh ,  Hanmin Jang

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a lower structure including a substrate, a first interconnection layer extending in a first direction on the lower structure, and including a first metal, a first via contacting a portion of an upper surface of the first interconnection layer and including a second metal, a second via contacting at least a portion of an upper surface of the first via and having a maximum width narrower than a maximum width of the first via, and a second interconnection layer connected to the second via and extending in a second direction. The first interconnection layer has inclined side surfaces in which a width of the first interconnection layer becomes narrower towards an upper region of the first interconnection layer, and the first via has inclined side surfaces in which a width of the first via becomes narrower towards an upper region of the first via.