公开(公告)号：US20230276619A1

公开(公告)日：2023-08-31

申请号：US18049061

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungmin Ju ,  Gyuhyun Kil ,  Hyebin Choi ,  Doosan Back ,  Ahrang Choi ,  Jung-Hoon Han

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  H01L27/10814 ,  H01L27/10894

Abstract: A semiconductor device includes a substrate having first and second active patterns therein, which are spaced apart from each other. The first active pattern has a top surface that is elevated relative to a top surface of the second active pattern. A channel semiconductor layer is provided on the top surface of the first active pattern. A first gate pattern is provided, which includes a first insulating pattern, on the channel semiconductor layer. A second gate pattern is provided, which includes a second insulating pattern having a thickness greater than a thickness of the first insulating pattern, on the top surface of the second active pattern.

公开(公告)号：US11917812B2

公开(公告)日：2024-02-27

申请号：US17484679

申请日：2021-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sohyeon Bae ,  Wonchul Lee ,  Jaehyun Kim ,  Jaehyuk Jang ,  Hyebin Choi

IPC: H10B12/00 ,  H01L23/528

CPC classification number: H10B12/315 ,  H01L23/528

Abstract: A semiconductor device includes a gate structure and a contact plug. The gate structure extends in a first direction parallel to the substrate, and includes a first conductive pattern, a second conductive pattern and a gate mask sequentially stacked. The contact plug contacts an end portion in the first direction of the gate structure, and includes a first extension portion extending in a vertical direction and contacting sidewalls of the gate mask and the second conductive pattern, a second extension portion under and contacting the first extension portion and a sidewall of the first conductive pattern, and a protrusion portion under and contacting the second extension portion. A bottom of the protrusion portion does not contact the first conductive pattern. A first slope of a sidewall of the first extension portion is greater than a second slope of a sidewall of the second extension portion.