公开(公告)号：US20240160732A1

公开(公告)日：2024-05-16

申请号：US18504430

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjae PARK ,  Seungki HONG ,  Hyunbo KIM ,  Insu CHOI

IPC: G06F21/55

CPC classification number: G06F21/554 ,  G06F2221/034

Abstract: Provided is a memory device including a memory cell array including a plurality of memory cell rows, the plurality of memory cell rows being grouped into a plurality of segments, a row decoder connected to the plurality of memory cell rows, and a refresh control circuit configured to generate a refresh control signal for controlling a refresh operation on the plurality of memory cell rows.