公开(公告)号：US20200111821A1

公开(公告)日：2020-04-09

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US11004889B2

公开(公告)日：2021-05-11

申请号：US16658855

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Su Park ,  Kwansik Kim ,  Yoonkyoung Kim ,  Changhwa Kim ,  Mangeun Cho ,  Hyungi Hong

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/223 ,  H01L21/225

Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

公开(公告)号：US20200381464A1

公开(公告)日：2020-12-03

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US11948956B2

公开(公告)日：2024-04-02

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L27/1463 ,  H01L27/14685 ,  H01L21/26513 ,  H01L21/266 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14641

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US10784301B2

公开(公告)日：2020-09-22

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/14 ,  H01L27/11 ,  H01L29/06 ,  H01L27/146 ,  H01L21/266 ,  H01L21/265 ,  H01L27/11517

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US20200219928A1

公开(公告)日：2020-07-09

申请号：US16658855

申请日：2019-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-SU PARK ,  Kwansik Kim ,  Yoonkyoung Kim ,  Changhwa Kim ,  Mangeun Cho ,  Hyungi Hong

IPC: H01L27/146 ,  H01L21/223 ,  H01L21/762

Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.