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公开(公告)号：US11004889B2
公开(公告)日：2021-05-11
申请号：US16658855
申请日：2019-10-21
发明人： Sang-Su Park , Kwansik Kim , Yoonkyoung Kim , Changhwa Kim , Mangeun Cho , Hyungi Hong
IPC分类号： H01L27/146 , H01L21/762 , H01L21/223 , H01L21/225
摘要： A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.
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公开(公告)号：US11450704B2
公开(公告)日：2022-09-20
申请号：US16878303
申请日：2020-05-19
发明人： Sangsu Park , Kwansik Kim , Sangchun Park , Beomsuk Lee , Taeyon Lee
IPC分类号： H01L27/146 , H04N9/04 , H04N5/357 , H01L51/42 , H01L31/032
摘要： An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.
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公开(公告)号：US20220238571A1
公开(公告)日：2022-07-28
申请号：US17522142
申请日：2021-11-09
发明人： Sang-Su PARK , Kwansik Kim , Changhwa Kim , Taemin Kim , Gyuhyun Lim
IPC分类号： H01L27/146
摘要： An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.
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公开(公告)号：US12074189B2
公开(公告)日：2024-08-27
申请号：US17947702
申请日：2022-09-19
发明人： Sangsu Park , Kwansik Kim , Sangchun Park , Beomsuk Lee , Taeyon Lee
IPC分类号： H01L27/146 , H01L31/032 , H04N25/13 , H04N25/616 , H04N25/617 , H10K30/65
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14625 , H01L27/1463 , H01L27/14638 , H01L27/14665 , H04N25/13 , H04N25/617 , H10K30/65 , H01L27/14621 , H01L27/1464 , H01L31/0323 , H04N25/616
摘要： An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.
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公开(公告)号：US20240258354A1
公开(公告)日：2024-08-01
申请号：US18242597
申请日：2023-09-06
发明人： Jungsan Kim , Kwansik Kim , Jinyong Choi , Gayoung Kim , Taemin Kim , Yongsoon Park , Ingyu Baek , Seungho Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14603 , H01L27/14645
摘要： An image sensor includes a lower insulating film arranged over a substrate and having a non-flat surface that has a concave-convex shape and includes a first surface, which extends in a horizontal direction parallel to a frontside surface of the substrate, and at least one second surface extending from the first surface toward the substrate, a capacitor arranged on the lower insulating film to contact the non-flat surface of the lower insulating film and conformally covering the non-flat surface of the lower insulating film along the contour of the non-flat surface of the lower insulating film, an upper insulating film covering the capacitor and the lower insulating film, and at least one air gap having a side facing the at least one second surface of the lower insulating film in the horizontal direction and having a height defined by the upper insulating film in a vertical direction.
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公开(公告)号：US20240222399A1
公开(公告)日：2024-07-04
申请号：US18380795
申请日：2023-10-17
发明人： Ingyu Baek , Kwansik Kim , Jungsan Kim , Taemin KIM
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14645
摘要： An image sensor may include a substrate including pixels, a first transistor and a second transistor disposed on the substrate and spaced apart from each other, a first interlayer insulating layer covering the first transistor and the second transistor, a first lower electrode disposed in the first interlayer insulating layer and connected to an end portion of the first transistor, a first dielectric layer on the first lower electrode, a first upper electrode on the first dielectric layer, a second interlayer insulating layer covering the first upper electrode and the first interlayer insulating layer, and a first pillar provided to penetrate the second and first interlayer insulating layers and connected to an end portion of the second transistor.
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公开(公告)号：US11574948B2
公开(公告)日：2023-02-07
申请号：US16711301
申请日：2019-12-11
发明人： Changhwa Kim , Kwansik Kim , Dongchan Kim , Sang-Su Park , Beomsuk Lee , Taeyon Lee , Hajin Lim
IPC分类号： H01L27/146 , H01L51/44 , H01L29/786
摘要： An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.
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8.发明授权公开(公告)号：US11569298B2
公开(公告)日：2023-01-31
申请号：US17034316
申请日：2020-09-28
发明人： Sangchun Park , Kwansik Kim , Hongki Kim , Sangsu Park , Beomsuk Lee , Taeyon Lee , Gwideok Ryan Lee
IPC分类号： H01L27/30 , H01L27/146 , H01L51/44
摘要： An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.
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公开(公告)号：US20200219928A1
公开(公告)日：2020-07-09
申请号：US16658855
申请日：2019-10-21
发明人： SANG-SU PARK , Kwansik Kim , Yoonkyoung Kim , Changhwa Kim , Mangeun Cho , Hyungi Hong
IPC分类号： H01L27/146 , H01L21/223 , H01L21/762
摘要： A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.
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