公开(公告)号：US20250081429A1

公开(公告)日：2025-03-06

申请号：US18664753

申请日：2024-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youmin Ban ,  Daeyoung Moon ,  Changwoo Seo ,  Suyoun Song ,  Hyungjun Hwang

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate, an active region defined by a device isolation layer within the substrate, a word line extending in a first horizontal direction within the substrate, a bit line extending on the substrate in a second horizontal direction intersecting with the first horizontal direction and including a metal-based conductive pattern, a first spacer on a sidewall of the metal-based conductive pattern, a second spacer on the first spacer, a direct contact in a direct contact hole exposing the active region and electrically connecting the bit line to the active region, and a buried spacer on a lower sidewall of the direct contact within the direct contact hole, wherein the second spacer contacts a sidewall of the direct contact on the sidewall of the direct contact.