公开(公告)号：US20210202527A1

公开(公告)日：2021-07-01

申请号：US17199497

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： HO-JUN KIM ,  JAEHYEOUNG MA ,  GEUMJONG BAE

IPC: H01L27/118 ,  H01L21/8238

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.