公开(公告)号：US20210090984A1

公开(公告)日：2021-03-25

申请号：US16830361

申请日：2020-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINHO CHUN ,  JIN HO AN ,  TEAHWA JEONG ,  JEONGGI JIN ,  JU-IL CHOI ,  ATSUSHI FUJISAKI

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48

Abstract: There are provided semiconductor packages including a redistribution substrate and a semiconductor chip mounted on the redistribution substrate. The redistribution substrate may include a lower protective layer, a first conductive pattern disposed on the lower protective layer, a first insulating layer surrounding the first conductive pattern and disposed on the lower protective layer, and a second insulating layer disposed on the first insulating layer. The first insulating layer may include a first upper surface that includes a first flat portion extending parallel to an upper surface of the lower protective layer, and a first recess facing the lower protective layer and in contact with the first conductive pattern. The first recess may be directly connected to the first conductive pattern.

公开(公告)号：US20230102285A1

公开(公告)日：2023-03-30

申请号：US18074134

申请日：2022-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGGI JIN ,  SOLJI SONG ,  TAEHWA JEONG ,  JINHO CHUN ,  JUIL CHOI ,  ATSUSHI FUJISAKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.

公开(公告)号：US20210305189A1

公开(公告)日：2021-09-30

申请号：US17088350

申请日：2020-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGGI JIN ,  SOLJI SONG ,  TAEHWA JEONG ,  JINHO CHUN ,  JUIL CHOI ,  ATSUSHI FUJISAKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.