中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.014 seconds)

    SEMICONDUCTOR PACKAGE
    1.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20250105116A1

    公开(公告)日：2025-03-27

    申请号：US18974377

    申请日：2024-12-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： JU-IL CHOI ,  GYUHO KANG ,  SEONG-HOON BAE ,  JIN HO AN ,  JEONGGI JIN ,  ATSUSHI FUJISAKI

    IPC: H01L23/498 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065 ,  H01L25/10

    Abstract: A semiconductor package may include a redistribution substrate, a semiconductor chip mounted on a top surface of the redistribution substrate, and a conductive terminal provided on a bottom surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern including a via portion in contact with the conductive terminal and a wire portion on the via portion and an insulating layer covering top and side surfaces of the under-bump pattern. A central portion of a bottom surface of the via portion may be provided at a level higher than an edge portion of the bottom surface of the via portion.

    SEMICONDUCTOR PACKAGE
    3.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20230103196A1

    公开(公告)日：2023-03-30

    申请号：US17740508

    申请日：2022-05-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： GYUHO KANG ,  JONGHO PARK ,  SEONG-HOON BAE ,  JEONGGI JIN ,  JU-IL CHOI ,  ATSUSHI FUJISAKI

    IPC: H01L23/48 ,  H01L25/10 ,  H01L23/00 ,  H01L23/498

    Abstract: A semiconductor device includes a first redistribution substrate, a semiconductor chip on a top surface of the first redistribution substrate, a conductive structure on the top surface of the first redistribution substrate and laterally spaced apart from the semiconductor chip, and a molding layer on the first redistribution substrate and covering a sidewall of the semiconductor chip and a sidewall of the conductive structure. The conductive structure includes a first conductive structure having a first sidewall, and a second conductive structure on a top surface of the first conductive structure and having a second sidewall. The first conductive structure has an undercut at a lower portion of the first sidewall. The second conductive structure has a protrusion at a lower portion of the second sidewall.

    SEMICONDUCTOR PACKAGE
    4.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20220077043A1

    公开(公告)日：2022-03-10

    申请号：US17306988

    申请日：2021-05-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： GYUHO KANG ,  SEONG-HOON BAE ,  JIN HO AN ,  TEAHWA JEONG ,  JU-IL CHOI ,  ATSUSHI FUJISAKI

    IPC: H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L23/00

    Abstract: A semiconductor package includes; a redistribution substrate including a redistribution pattern, a semiconductor chip mounted on a top surface of the redistribution substrate, and a connection terminal between the semiconductor chip and the redistribution substrate. The redistribution substrate further includes; a pad structure including a pad interconnection and a pad via, disposed between the redistribution pattern and the connection terminal, wherein the pad structure is electrically connected to the redistribution pattern and a top surface of the pad structure contacts the connection terminal, a shaped insulating pattern disposed on a top surface of the redistribution pattern, and a pad seed pattern disposed on the redistribution pattern and covering the shaped insulating pattern.

    SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210090984A1

    公开(公告)日：2021-03-25

    申请号：US16830361

    申请日：2020-03-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： JINHO CHUN ,  JIN HO AN ,  TEAHWA JEONG ,  JEONGGI JIN ,  JU-IL CHOI ,  ATSUSHI FUJISAKI

    IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48

    Abstract: There are provided semiconductor packages including a redistribution substrate and a semiconductor chip mounted on the redistribution substrate. The redistribution substrate may include a lower protective layer, a first conductive pattern disposed on the lower protective layer, a first insulating layer surrounding the first conductive pattern and disposed on the lower protective layer, and a second insulating layer disposed on the first insulating layer. The first insulating layer may include a first upper surface that includes a first flat portion extending parallel to an upper surface of the lower protective layer, and a first recess facing the lower protective layer and in contact with the first conductive pattern. The first recess may be directly connected to the first conductive pattern.

    SEMICONDUCTOR PACKAGE
    8.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20220157702A1

    公开(公告)日：2022-05-19

    申请号：US17381869

    申请日：2021-07-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： JU-IL CHOI ,  GYUHO KANG ,  SEONG-HOON BAE ,  JIN HO AN ,  JEONGGI JIN ,  ATSUSHI FUJISAKI

    IPC: H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L23/538 ,  H01L23/00

    Abstract: A semiconductor package may include a redistribution substrate, a semiconductor chip mounted on a top surface of the redistribution substrate, and a conductive terminal provided on a bottom surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern including a via portion in contact with the conductive terminal and a wire portion on the via portion and an insulating layer covering top and side surfaces of the under-bump pattern. A central portion of a bottom surface of the via portion may be provided at a level higher than an edge portion of the bottom surface of the via portion.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230102285A1

    公开(公告)日：2023-03-30

    申请号：US18074134

    申请日：2022-12-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JEONGGI JIN ,  SOLJI SONG ,  TAEHWA JEONG ,  JINHO CHUN ,  JUIL CHOI ,  ATSUSHI FUJISAKI

    IPC: H01L23/00 ,  H01L23/522

    Abstract: A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210305189A1

    公开(公告)日：2021-09-30

    申请号：US17088350

    申请日：2020-11-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JEONGGI JIN ,  SOLJI SONG ,  TAEHWA JEONG ,  JINHO CHUN ,  JUIL CHOI ,  ATSUSHI FUJISAKI

    IPC: H01L23/00 ,  H01L23/522

    Abstract: A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.

Patent Agency Ranking