公开(公告)号：US20250087612A1

公开(公告)日：2025-03-13

申请号：US18626272

申请日：2024-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNHYUN AN ,  UN-BYOUNG KANG ,  HYOJIN YUN ,  SEUNG HUN CHAE ,  JU-IL CHOI

IPC: H01L23/00

Abstract: The present disclosure relates to a conductive structure including: a conductive pad that includes a first seed layer having a first area and a second area surrounding the first area, and a first metal layer disposed on the first area of the first seed layer; and a conductive pillar disposed on the conductive pad, wherein a thickness of the conductive pad in an area vertically overlapping the first area of the first seed layer is thicker than a thickness of the conductive pad in an area vertically overlapping the second area of the first seed layer, a semiconductor chip including the conductive structure, and a manufacturing method of the conductive structure.