公开(公告)号：US20240337948A1

公开(公告)日：2024-10-10

申请号：US18744751

申请日：2024-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYOJIN YUN ,  SEUNGWON KIM ,  TAEYOUNG KIM ,  WOOJUNG PARK ,  JINHYE BAE ,  HYUNSEOP SHIN ,  MINTAE LEE ,  HOON HAN ,  MOONYOUNG KIM ,  MOONCHANG KIM ,  CHEOLMO YANG ,  YUNSEOK CHOI

IPC: G03F7/42 ,  B08B3/04 ,  C11D3/04 ,  H01L21/02

CPC classification number: G03F7/425 ,  B08B3/04 ,  C11D3/044 ,  H01L21/0206

Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

公开(公告)号：US20250087612A1

公开(公告)日：2025-03-13

申请号：US18626272

申请日：2024-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNHYUN AN ,  UN-BYOUNG KANG ,  HYOJIN YUN ,  SEUNG HUN CHAE ,  JU-IL CHOI

IPC: H01L23/00

Abstract: The present disclosure relates to a conductive structure including: a conductive pad that includes a first seed layer having a first area and a second area surrounding the first area, and a first metal layer disposed on the first area of the first seed layer; and a conductive pillar disposed on the conductive pad, wherein a thickness of the conductive pad in an area vertically overlapping the first area of the first seed layer is thicker than a thickness of the conductive pad in an area vertically overlapping the second area of the first seed layer, a semiconductor chip including the conductive structure, and a manufacturing method of the conductive structure.

公开(公告)号：US20220350253A1

公开(公告)日：2022-11-03

申请号：US17569556

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYOJIN YUN ,  Seungwon Kim ,  Taeyoung Kim ,  Woojung Park ,  Jinhye Bae ,  Hyunseop Shin ,  Mintae Lee ,  Hoon Han ,  Moonyoung Kim ,  Moonchang Kim ,  Cheolmo Yang ,  Yunseok Choi

IPC: G03F7/42 ,  B08B3/04 ,  C11D3/04 ,  H01L21/02

Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.