公开(公告)号：US20140241093A1

公开(公告)日：2014-08-28

申请号：US14077187

申请日：2013-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Jin LEE ,  Dae-Hyun KIM ,  Sang-Yun KIM ,  Jae-Sung KIM ,  Young-Soo SOHN

IPC: G11C7/00

CPC classification number: G11C11/40611 ,  G11C11/40622 ,  G11C29/028 ,  G11C29/50016

Abstract: A refresh address generator may include a lookup table including a first portion storing a first group of addresses associated with a first data retention time, and a second portion storing a second group of addresses associated with a second data retention time different from the first data retention time, wherein the addresses of the first portion are more frequently accessed than the addresses of the second portion to refresh the memory cells corresponding to the addresses. Systems and methods may also implement such refresh address generation.

Abstract translation: 刷新地址生成器可以包括查找表，其包括存储与第一数据保留时间相关联的第一组地址的第一部分，以及存储与第二数据保留时间相关联的第二组地址的第二部分，该第二组地址与第一数据保留不同 时间，其中第一部分的地址比第二部分的地址更频繁地访问以刷新对应于地址的存储单元。 系统和方法也可以实现这种刷新地址生成。

公开(公告)号：US20140140153A1

公开(公告)日：2014-05-22

申请号：US13804690

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Pil SON ,  Jae-Sung KIM ,  Uk-Song KANG ,  Young-Soo SOHN

IPC: G11C29/04

CPC classification number: G11C29/04 ,  G11C29/806 ,  G11C29/808 ,  G11C2029/4402

Abstract: A repair control circuit of controlling a repair operation of a semiconductor memory device includes a row matching block and a column matching block. The row matching block stores fail group information indicating one or more fail row groups among a plurality of row groups. The row groups are determined by grouping a plurality of row addresses corresponding to a plurality of wordlines. The row matching block generates a group match signal based on input row address and the fail group information, such that the group match signal indicates the fail row group including the input row address. The column matching block stores fail column addresses of the fail memory cells, and generates a repair control signal based on input column address, the group match signal and the fail column addresses, such that the repair control signal indicates whether the repair operation is executed or not.

Abstract translation: 控制半导体存储器件的修复操作的修复控制电路包括行匹配块和列匹配块。 行匹配块存储指示多个行组中的一个或多个故障行组的故障组信息。 通过对与多个字线对应的多个行地址进行分组来确定行组。 行匹配块基于输入行地址和故障组信息生成组匹配信号，使得组匹配信号指示包括输入行地址的故障行组。 列匹配块存储故障存储器单元的故障列地址，并且基于输入列地址，组匹配信号和故障列地址生成修复控制信号，使得修复控制信号指示是否执行修复操作或 不。