ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    1.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开
    有机光电器件和图像传感器

    公开(公告)号:US20160099430A1

    公开(公告)日:2016-04-07

    申请号:US14794207

    申请日:2015-07-08

    Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.

    Abstract translation: 提供一种有机光电子器件,其包括位于光入射侧的第一透光电极,与第一透光电极相对的第二透光电极,位于第一透光电极和第二透光电极之间的光活性层, 并且选择性地吸收给定(或者,期望或预定)波长区域中的光,以及位于第一透光电极和光活性层之间的选择性透光层,在第二透光电极和光活性层之间 层,或者在第一透光电极和光活性层之间以及第二透光电极和光敏层之间,并且增加除了给定(或者,期望或预定)波长之外的波长区域中的光的透射率 由光活性层吸收的区域和电极 还提供了包括图像传感器的装置。

    ORGANIC PHOTODETECTOR AND IMAGE SENSOR
    2.
    发明申请
    ORGANIC PHOTODETECTOR AND IMAGE SENSOR 有权
    有机照相机和图像传感器

    公开(公告)号:US20170033303A1

    公开(公告)日:2017-02-02

    申请号:US14995318

    申请日:2016-01-14

    Abstract: An organic photodetector includes an anode and a cathode facing each other and an active layer between the anode and the cathode and including a p-type semiconductor and an n-type semiconductor, wherein an energy barrier between the anode or the cathode and the active layer is greater than or equal to about 1.3 eV, a difference between a HOMO energy level of the p-type semiconductor and a LUMO energy level of the n-type semiconductor is greater than or equal to about 0.8 eV.

    Abstract translation: 一种有机光电探测器包括一阳极和一阴极彼此面对,一阳极和阴极之间的有源层,包括一p型半导体和一n型半导体,其中阳极或阴极与有源层之间的能量势垒 大于或等于约1.3eV,p型半导体的HOMO能级和n型半导体的LUMO能级之差大于或等于约0.8eV。

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