公开(公告)号：US20190279904A1

公开(公告)日：2019-09-12

申请号：US16297950

申请日：2019-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byong-gook Jeong ,  Byung-ho Kim ,  Youn-jo Mun ,  Jeong-cheol An ,  Sung-il Cho ,  Dae-sang Chun ,  Man-hee Han

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/268

Abstract: A method of fabricating a semiconductor package includes providing a substrate on a stage, the substrate including semiconductor dies and a modified layer along a partition lane and sequentially having an adhesive film and a base film on a surface thereof so that bottom surfaces of the adhesive film and the base film face the stage and top surfaces of the adhesive film and the base film face away from the stage and the bottom surface of the adhesive film faces the top surface of the base film; separating the semiconductor dies from each other by applying a force to the substrate in a lateral direction; applying a gas pressure to a top surface of each of the semiconductor dies; and irradiating ultraviolet rays toward the adhesive film after applying the gas pressure on the top surface of each of the semiconductor dies.

公开(公告)号：US10741448B2

公开(公告)日：2020-08-11

申请号：US16297950

申请日：2019-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byong-gook Jeong ,  Byung-ho Kim ,  Youn-jo Mun ,  Jeong-cheol An ,  Sung-il Cho ,  Dae-sang Chun ,  Man-hee Han

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/268

Abstract: A method of fabricating a semiconductor package includes providing a substrate on a stage, the substrate including semiconductor dies and a modified layer along a partition lane and sequentially having an adhesive film and a base film on a surface thereof so that bottom surfaces of the adhesive film and the base film face the stage and top surfaces of the adhesive film and the base film face away from the stage and the bottom surface of the adhesive film faces the top surface of the base film; separating the semiconductor dies from each other by applying a force to the substrate in a lateral direction; applying a gas pressure to a top surface of each of the semiconductor dies; and irradiating ultraviolet rays toward the adhesive film after applying the gas pressure on the top surface of each of the semiconductor dies.