公开(公告)号：US20190257003A1

公开(公告)日：2019-08-22

申请号：US16281232

申请日：2019-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A. KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C30B29/48 ,  C01G9/08 ,  H01L51/50

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US20220102353A1

公开(公告)日：2022-03-31

申请号：US17339130

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A. KIM ,  Ho-In RYU ,  Seong Min PARK

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate including a trench, a direct contact in the trench, the direct contact having a width smaller than a width of the trench, a bit line structure on the direct contact, the bit line structure having a width smaller than the width of the trench, a first spacer including a first portion and a second portion, the first portion extending along an entire side surface of the direct contact, and the second portion extending along the trench, a second spacer on the first spacer, the second spacer filling the trench, a third spacer on the second spacer, and an air spacer on the third spacer, the air spacer being spaced apart from the second spacer by the third spacer, wherein the first spacer includes silicon oxide.

公开(公告)号：US20220102528A1

公开(公告)日：2022-03-31

申请号：US17339144

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A. KIM ,  Ho-In RYU ,  Jae Won NA

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device includes a substrate having a trench, a conductive pattern in the trench, a spacer structure on a side surface of the conductive pattern, and a buried contact including a first portion apart from the conductive pattern by the spacer structure and filling a contact recess, and a second portion on the first portion having a pillar shape with a width smaller than that of a top surface of the first portion. The spacer structure includes a first spacer extending along the second portion of the buried contact on the first portion of the buried contact and contacting the buried contact, a second spacer extending along the first spacer, and a third spacer extending along the side surface of the conductive pattern and the trench and apart from the first spacer by the second spacer, the first spacer includes silicon oxide, and the second spacer includes silicon nitride.

公开(公告)号：US20230313038A1

公开(公告)日：2023-10-05

申请号：US18302341

申请日：2023-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A. KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/56

CPC classification number: C09K11/883 ,  C09K11/565 ,  H10K50/115

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

公开(公告)号：US20210104696A1

公开(公告)日：2021-04-08

申请号：US17062162

申请日：2020-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin PARK ,  Yuho WON ,  Eun Joo JANG ,  Dae Young CHUNG ,  Sung Woo KIM ,  Jin A. KIM ,  Yong Seok HAN

IPC: H01L51/50 ,  H01L51/00

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.