公开(公告)号：US20140084384A1

公开(公告)日：2014-03-27

申请号：US14028912

申请日：2013-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwan CHOI ,  Bo-Young LEE ,  Myoungbum LEE

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L27/11529

Abstract: A semiconductor device includes a plurality of gate structures on a substrate, the plurality of gate structures including a gate metal pattern and delimiting air gaps formed therebetween, an insulating layer on the plurality of gate structures, and a porous insulating layer between the plurality of gate structures and the insulating layer, the porous insulating layer configured to cross the plurality of gate structures to delimit the air gaps.

Abstract translation: 半导体器件包括在衬底上的多个栅极结构，所述多个栅极结构包括栅极金属图案和形成在其间的限定气隙，多个栅极结构上的绝缘层和多个栅极之间的多孔绝缘层 结构和绝缘层，所述多孔绝缘层被配置成跨越所述多个栅极结构以限定所述气隙。