公开(公告)号：US20140084384A1

公开(公告)日：2014-03-27

申请号：US14028912

申请日：2013-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwan CHOI ,  Bo-Young LEE ,  Myoungbum LEE

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L27/11529

Abstract: A semiconductor device includes a plurality of gate structures on a substrate, the plurality of gate structures including a gate metal pattern and delimiting air gaps formed therebetween, an insulating layer on the plurality of gate structures, and a porous insulating layer between the plurality of gate structures and the insulating layer, the porous insulating layer configured to cross the plurality of gate structures to delimit the air gaps.

Abstract translation: 半导体器件包括在衬底上的多个栅极结构，所述多个栅极结构包括栅极金属图案和形成在其间的限定气隙，多个栅极结构上的绝缘层和多个栅极之间的多孔绝缘层 结构和绝缘层，所述多孔绝缘层被配置成跨越所述多个栅极结构以限定所述气隙。

公开(公告)号：US20140162440A1

公开(公告)日：2014-06-12

申请号：US14082657

申请日：2013-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Ho Kim ,  Daehyun JANG ,  Myoungbum LEE ,  Kihyun HWANG ,  Sangryol YANG ,  Yong-Hoon SON ,  Ju-Eun KIM ,  Sunghae LEE ,  Dongwoo KIM ,  JinGyun KIM

IPC: H01L27/115 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/324 ,  H01L27/11551 ,  H01L27/11578 ,  H01L29/7926

Abstract: Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.

Abstract translation: 可以提供形成半导体器件的方法。 形成半导体器件的方法可以包括图案化第一和第二材料层以形成暴露衬底的第一穿透区域。 该方法可以包括在衬底上的第一至区域中以及在第一和第二材料层的侧壁上形成第一半导体层。 在一些实施例中，该方法可以包括形成填充第一半导体层上的第一通过区域的掩埋层。 在一些实施例中，该方法可以包括移除掩埋层的一部分以在第一和第二材料层的侧壁之间形成第二穿透区域。 此外，该方法可以包括在第二通过区域中形成第二半导体层。