公开(公告)号：US20250021122A1

公开(公告)日：2025-01-16

申请号：US18412844

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haejung CHOI ,  Jooseong KIM ,  Junhyeok YANG ,  Sungmin YOO

IPC: G05F3/20 ,  G05F1/567 ,  G05F3/26

Abstract: A semiconductor device including a bandgap reference generator that generates a reference voltage; a switch control voltage generator that generates a first reference current based on the reference voltage, and generates an adaptive switch level voltage by distributing the first reference current to a first path and a second path, the first path including a first resistor, and the second path including a second resistor and a first bipolar junction transistor connected in series; and a switch controller that generates a switch control signal for controlling switches included in the bandgap reference generator based on the adaptive switch level voltage. The adaptive switch level voltage has a slope with respect to temperature that is greater than a base-emitter voltage of the first bipolar junction transistor.