公开(公告)号：US11721495B2

公开(公告)日：2023-08-08

申请号：US16942445

申请日：2020-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Bo Yoon ,  Pan Kyu Choi ,  Yong Bok Lee ,  Subon Kim ,  Suhyun Kim

IPC: H01H1/00 ,  H01H1/62 ,  H01H1/14

CPC classification number: H01H1/0094 ,  H01H1/62 ,  H01H1/14 ,  H01H2231/002 ,  H01H2239/06

Abstract: A switching device in accordance with the present invention includes a first electrode and a second electrode, and the second electrode includes a body part and a cantilever connected to the body part. In addition, one end of a the cantilever comes into contact with the first electrode by an electrostatic force generated by a voltage applied to the first electrode and the second electrode, and the one end of the cantilever is separated from the first electrode due to heat generated by a voltage applied to both ends of the body part. In addition, the second electrode may include a 2-1 electrode, a 2-2 electrode, and an engineered beam connected in between. The engineered beam comes into contact with the first electrode on the basis of thermal expansion due to heat generated by a current flowing between the body part of the 2-1 electrode and the body part of the 2-2 electrode, or is separated from the first electrode on the basis of thermal expansion due to heat generated by a current flowing through both ends of the body parts of the 2-1 electrode and the 2-2 electrode. According to the present invention, it is possible to achieve high-speed operation while having ultralow power, high reliability through exploiting nano thermal actuation method capable of high-speed thermal expansion and actuation at low operation voltage.