公开(公告)号：US20190229492A1

公开(公告)日：2019-07-25

申请号：US16152661

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho CHA ,  Seong-Gu KIM ,  Dong-Jae SHIN ,  Yong-Hwack SHIN ,  Kyoung-Ho HA

IPC: H01S5/024 ,  H01S5/10 ,  H01S5/042 ,  H01S5/20 ,  H01S5/026 ,  H01S5/323 ,  H01S5/40

Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.