公开(公告)号：US20130343696A1

公开(公告)日：2013-12-26

申请号：US13826471

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Gu KIM ,  Dong-Jae SHIN ,  Yong-Hwack SHIN ,  Young CHOI ,  Kyoung-Ho HA

IPC: G02B6/12

CPC classification number: G02B6/12 ,  G02B6/12004 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract translation: 光学集成电路可以包括包括单晶半导体材料的衬底，在衬底的<100>晶体取向中延伸并包括单晶半导体材料的无源元件和以<110>晶体取向延伸的有源元件 并且包括单晶半导体材料。

公开(公告)号：US20190229492A1

公开(公告)日：2019-07-25

申请号：US16152661

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho CHA ,  Seong-Gu KIM ,  Dong-Jae SHIN ,  Yong-Hwack SHIN ,  Kyoung-Ho HA

IPC: H01S5/024 ,  H01S5/10 ,  H01S5/042 ,  H01S5/20 ,  H01S5/026 ,  H01S5/323 ,  H01S5/40

Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.