公开(公告)号：US20240211170A1

公开(公告)日：2024-06-27

申请号：US18365421

申请日：2023-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwansuk JUNG ,  Sungwon KO ,  Hoyoung CHANG ,  Youngjin CHO

IPC: G06F3/06 ,  G06F11/10

CPC classification number: G06F3/0658 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0673 ,  G06F11/1008

Abstract: An operation method of a memory controller includes sequentially transmitting a first read command for the first plane and a second read command for the second plane to the nonvolatile memory device, transmitting a first status read command corresponding to the first read command to the nonvolatile memory device, transmitting a first memory access command corresponding to the first read command to the nonvolatile memory device based on first status information, receiving first read data that is output from the nonvolatile memory device, skipping issuing of a status read command corresponding to the second read command and transmitting a second memory access command corresponding to the second read command to the nonvolatile memory device, after receiving the first read data, and receiving second read data that is output from the nonvolatile memory device.