公开(公告)号：US12230667B2

公开(公告)日：2025-02-18

申请号：US17854679

申请日：2022-06-30

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Sang Yeol Kang ,  Kyu Ho Cho ,  Han Jin Lim ,  Cheol Seong Hwang

IPC: H10B12/00 ,  H01L49/02

Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

公开(公告)号：US11411069B2

公开(公告)日：2022-08-09

申请号：US17030678

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Yeol Kang ,  Kyu Ho Cho ,  Han Jin Lim ,  Cheol Seong Hwang

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

公开(公告)号：US10825889B2

公开(公告)日：2020-11-03

申请号：US16012997

申请日：2018-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Yeol Kang ,  Kyu Ho Cho ,  Han Jin Lim ,  Cheol Seong Hwang

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.