公开(公告)号：US20240377563A1

公开(公告)日：2024-11-14

申请号：US18225099

申请日：2023-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeri Park HANANIA ,  Radwanul Hasan SIDDIQUE ,  Mahsa TORFEH ,  Yibing Michelle WANG

IPC: G02B5/18 ,  B82Y20/00 ,  G02B1/00 ,  G02B1/118

Abstract: A diffractive optical element (DOE) includes a substrate layer; and a nanostructure layer comprising nanostructures having a predetermined periodicity ranging from 0.75λ to 3λ of a target wavelength λ. The nanostructures are pillar-shaped nanostructures formed on a surface of the substrate layer, holes formed in the substrate layer, or a combination thereof. At least one nanostructure has a plan-view cross-sectional shape of a circle, an oval, a square, or a rectangle. The plan-view cross-sectional shape of at least one nanostructure includes a rounded corner having a corner radius selected based on a desired light dot nonuniformity of a diffraction pattern generated by the DOE. When the nanostructures are pillar-shaped, a refractive index of the nanostructures is greater than a refractive index of the substrate layer. When the nanostructures are holes, a refractive index of the nanostructures is less than a refractive index of the substrate layer.

公开(公告)号：US20240120360A1

公开(公告)日：2024-04-11

申请号：US18101578

申请日：2023-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Radwanul Hasan SIDDIQUE ,  Yibing Michelle WANG ,  Mahsa TORFEH ,  Tze-Ching FUNG

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14649

Abstract: A pixel for an image sensor is disclosed that includes a photodiode, a thin-film layer and a reflective layer. The photodiode includes a first side and a second side that is opposite the first side, and receives incident light on the first side. The thin-film layer is formed on the first side of the photodiode and provides a unidirectional phase-shift to light passing from the photodiode to the thin-film layer. The thin-film layer has a refractive index that less than a refractive index of material forming the photodiode. The unidirectional phase-shift may be a unidirectional it phase shift at a target near-infrared light wavelength. The reflective layer is formed on the second side of the photodiode and reflects light passing from the photodiode to the reflective layer toward the first side of the photodiode. The reflective layer may be a thin-film layer, a Distributed Bragg Reflector layer, or a metal.