公开(公告)号：US20210265258A1

公开(公告)日：2021-08-26

申请号：US17316028

申请日：2021-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yu-Kyung PARK ,  Seung-kwan RYU ,  Min-seung YOON ,  Yun-seok CHOI

IPC: H01L23/498 ,  H01L25/18 ,  H01L21/48 ,  H01L23/538

Abstract: An interposer includes: a base substrate; an interconnection structure on a top surface of the base substrate and including a metal interconnection pattern; an upper passivation layer on the interconnection structure and having compressive stress; a lower passivation layer under a bottom surface of base substrate, the lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer; a lower conductive layer under the lower passivation layer; and a through electrode penetrating the base substrate and the lower passivation layer. The through electrode electrically connects the lower conductive layer to the metal interconnection pattern of the interconnection structure.

公开(公告)号：US20200312760A1

公开(公告)日：2020-10-01

申请号：US16563202

申请日：2019-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yu-Kyung PARK ,  Seung-kwan RYU ,  Min-seung YOON ,  Yun-seok CHOI

IPC: H01L23/498 ,  H01L25/18 ,  H01L21/48

Abstract: An interposer includes: a base substrate; an interconnection structure on a top surface of the base substrate and including a metal interconnection pattern; an upper passivation layer on the interconnection structure and having compressive stress; a lower passivation layer under a bottom surface of base substrate, the lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer; a lower conductive layer under the lower passivation layer; and a through electrode penetrating the base substrate and the lower passivation layer. The through electrode electrically connects the lower conductive layer to the metal interconnection pattern of the interconnection structure.