公开(公告)号：US20200013745A1

公开(公告)日：2020-01-09

申请号：US16455788

申请日：2019-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-IK LEE ,  DONG-WAN KIM ,  SEOK-HOSEAN SHIN ,  JUNG-HOON HAN ,  SANG-OH PARK

IPC: H01L23/00 ,  H01L25/18 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/31

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.