公开(公告)号：US20220068805A1

公开(公告)日：2022-03-03

申请号：US17235984

申请日：2021-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGJIN LEE ,  KYUNGWOOK KIM ,  RAKHWAN KIM ,  SEUNGYONG YOO ,  EUN-JI JUNG

IPC: H01L23/522 ,  H01L23/532 ,  H01L29/45

Abstract: Semiconductor devices includes a first interlayer insulating layer, a lower interconnection line in the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer and the lower interconnection line, a second interlayer insulating layer on the etch stop layer, and an upper interconnection line in the second interlayer insulating layer. The upper interconnection line includes a via portion extending through the etch stop layer and contacting the lower interconnection line. The via portion includes a barrier pattern and a conductive pattern. The barrier pattern includes a first barrier layer between the conductive pattern and the second interlayer insulating layer, and a second barrier layer between the conductive pattern and the lower interconnection line. A resistivity of the first barrier layer is greater than that of the second barrier layer. A nitrogen concentration of the first barrier layer is greater than that of the second barrier layer.