公开(公告)号：US09136268B2

公开(公告)日：2015-09-15

申请号：US13834492

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-il Oh ,  Seok-jae Lee ,  Sung-hoon Kim ,  Joung-yeal Kim

IPC: H01L27/108 ,  H01L27/02 ,  H01L27/105 ,  H01L29/94 ,  H01L27/22 ,  H01L27/08

CPC classification number: H01L27/108 ,  H01L27/0207 ,  H01L27/0805 ,  H01L27/1052 ,  H01L27/10897 ,  H01L27/228 ,  H01L29/94

Abstract: A semiconductor device includes: a second transistor having a second conductive type formed on a first well region having a first conductive type; a first transistor having a first conductive type formed on a second well region having a second conductive type; a first well guard ring having the first conductive type, the first well guard ring including at least a first portion formed between the first transistor and the second transistor; a second well guard ring having the first conductive type, the second well guard ring including at least a first portion formed between the first transistor and the second transistor; and a first capacitor formed on at least one of the first well region and the second well region, and located between the first portion of the first well guard ring and the first portion of the second well guard ring.

Abstract translation: 半导体器件包括：具有形成在具有第一导电类型的第一阱区上的第二导电类型的第二晶体管; 形成在具有第二导电类型的第二阱区上的具有第一导电类型的第一晶体管; 具有第一导电类型的第一保护环，所述第一阱保护环至少包括形成在所述第一晶体管和所述第二晶体管之间的第一部分; 具有第一导电类型的第二保护环，所述第二阱保护环至少包括形成在所述第一晶体管和所述第二晶体管之间的第一部分; 以及第一电容器，其形成在所述第一阱区域和所述第二阱区域中的至少一个上，并且位于所述第一阱保护环的所述第一部分和所述第二阱保护环的所述第一部分之间。