公开(公告)号：US20190259437A1

公开(公告)日：2019-08-22

申请号：US16285295

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boyoung SEO ,  Seongui SEO ,  Gwanhyeob KOH ,  Yongkyu LEE

IPC: G11C11/16 ,  H01L27/22

Abstract: A magnetic memory device includes a substrate, a landing pad on the substrate, first and second magnetic tunnel junction patterns disposed on the interlayer insulating layer and spaced apart from the landing pad when viewed from a plan view, and an interconnection structure electrically connecting a top surface of the second magnetic tunnel junction pattern to the landing pad. A distance between the landing pad and the first magnetic tunnel junction pattern is greater than a distance between the first and second magnetic tunnel junction patterns, and a distance between the landing pad and the second magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, when viewed from a plan view.

公开(公告)号：US20240160296A1

公开(公告)日：2024-05-16

申请号：US18416007

申请日：2024-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Okyun KWON ,  Seongui SEO

IPC: G06F3/023 ,  G06F3/01

CPC classification number: G06F3/0236 ,  G06F3/018

Abstract: A character input keyboard including a first key area where character keys corresponding to a first character group are arranged, a second key area where character keys corresponding to a second character group are arranged, and a conversion key arranged between the first key area and the second key area. A processor is configured to display a first character corresponding to a selected character key based on selection of a character key in the first key area or the second key area, and display a second character associated with the first character in place of the first character based on selection of the conversion key while the first character is being displayed.

公开(公告)号：US20200035281A1

公开(公告)日：2020-01-30

申请号：US16401236

申请日：2019-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chankyung KIM ,  Taehyun KIM ,  Seongui SEO ,  Sangjung JEON

IPC: G11C11/16

Abstract: A memory device including: a memory cell array including a memory cell, the memory cell configured to store first data based on a first write current; a write driver configured to output the first write current based on a control value; and a current controller including a replica memory cell, the current controller configured to generate the control value based on a state of second data which is stored in the replica memory cell, wherein an intensity of the first write current is adjusted based on the control value.