公开(公告)号：US20190096853A1

公开(公告)日：2019-03-28

申请号：US16044886

申请日：2018-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haesuk LEE ,  So-Young KIM ,  Seung-Han WOO

IPC: H01L25/065 ,  G11C5/02 ,  H01L23/538

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a first direction, M data paths electrically connecting the plurality of semiconductor dies, one data path including one or more through-silicon vias, where M is a positive integer, a transmission circuit including M serialization units configured to serialize P transmission signals to M serial signals and output the M serial signals to the M data paths, respectively, where P is a positive integer greater than M and a reception circuit including M parallelization units configured to receive the M serial signals from the M data paths and parallelize the M serial signals to P reception signals corresponding to the P transmission signals. The number of the through-silicon vias is reduced by serializing the transmission signals, transferring the serialized signals through the smaller number of data paths between the stacked semiconductor dies and then parallelizing the transferred signals.