INFRARED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240292640A1

    公开(公告)日:2024-08-29

    申请号:US18586789

    申请日:2024-02-26

    CPC classification number: H10K39/32

    Abstract: An image sensor including a semiconductor substrate including a first surface and a second surface opposite to the first surface, an anti-reflection layer on the first surface of the semiconductor substrate, and a photoelectric converter configured to absorb incident light incident through the semiconductor substrate and photoelectrically convert the incident light. The semiconductor substrate includes a refraction pattern on the first surface of the semiconductor substrate and configured to refract the incident light.

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