INFRARED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240292640A1

    公开(公告)日:2024-08-29

    申请号:US18586789

    申请日:2024-02-26

    CPC classification number: H10K39/32

    Abstract: An image sensor including a semiconductor substrate including a first surface and a second surface opposite to the first surface, an anti-reflection layer on the first surface of the semiconductor substrate, and a photoelectric converter configured to absorb incident light incident through the semiconductor substrate and photoelectrically convert the incident light. The semiconductor substrate includes a refraction pattern on the first surface of the semiconductor substrate and configured to refract the incident light.

    IMAGE SENSOR
    2.
    发明申请

    公开(公告)号:US20230005980A1

    公开(公告)日:2023-01-05

    申请号:US17671794

    申请日:2022-02-15

    Abstract: An image sensor includes: a substrate, having first and second surfaces opposing each other in a first direction, on which a plurality of unit pixels are arranged, the plurality of unit pixels including a normal pixel, an autofocusing pixel, and a compensation pixel in a direction, parallel to the first surface; a photodiode disposed in the substrate in each of the plurality of unit pixels; and a device isolation layer disposed between the plurality of unit pixels. The unit pixels include color filters, separated from each other by a grid, and microlenses disposed on the color filters. The compensation pixel is disposed on one side of the autofocusing pixel and includes a compensation microlens, smaller than a normal microlens included in the normal pixel, and a transparent color filter separated from adjacent color filters by a compensation grid smaller than a normal grid included in the normal pixel.

    IMAGE SENSOR
    4.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20230361142A1

    公开(公告)日:2023-11-09

    申请号:US18170652

    申请日:2023-02-17

    Abstract: Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.

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