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公开(公告)号:US20240292640A1
公开(公告)日:2024-08-29
申请号:US18586789
申请日:2024-02-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yunki LEE , Soongju OH , Byungku JUNG , Hyeyeon PARK
IPC: H10K39/32
CPC classification number: H10K39/32
Abstract: An image sensor including a semiconductor substrate including a first surface and a second surface opposite to the first surface, an anti-reflection layer on the first surface of the semiconductor substrate, and a photoelectric converter configured to absorb incident light incident through the semiconductor substrate and photoelectrically convert the incident light. The semiconductor substrate includes a refraction pattern on the first surface of the semiconductor substrate and configured to refract the incident light.
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公开(公告)号:US20230005980A1
公开(公告)日:2023-01-05
申请号:US17671794
申请日:2022-02-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Boseong KIM , Bumsuk KIM , Hyeyeon PARK , Jeongmin BAE , Yunki LEE
IPC: H01L27/146
Abstract: An image sensor includes: a substrate, having first and second surfaces opposing each other in a first direction, on which a plurality of unit pixels are arranged, the plurality of unit pixels including a normal pixel, an autofocusing pixel, and a compensation pixel in a direction, parallel to the first surface; a photodiode disposed in the substrate in each of the plurality of unit pixels; and a device isolation layer disposed between the plurality of unit pixels. The unit pixels include color filters, separated from each other by a grid, and microlenses disposed on the color filters. The compensation pixel is disposed on one side of the autofocusing pixel and includes a compensation microlens, smaller than a normal microlens included in the normal pixel, and a transparent color filter separated from adjacent color filters by a compensation grid smaller than a normal grid included in the normal pixel.
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公开(公告)号:US20240258350A1
公开(公告)日:2024-08-01
申请号:US18421468
申请日:2024-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeyeon PARK , Yunki LEE , Jieun KIM , Keosung PARK , Hajin LIM , Taeksoo JEON , Hyunkyu CHOI , Jaesung HUR
IPC: H01L27/146
CPC classification number: H01L27/14625 , H01L27/14645
Abstract: Provided is an image sensor including a first substrate including a pixel area and a peripheral area adjacent to the pixel area, the pixel area including a plurality of pixels in a 2-dimensional array, a first wiring layer on a lower surface of the first substrate, an anti-reflective layer having a first refractive index, the anti-reflective layer being on an upper surface of the first substrate, and color filters on the anti-reflective layer corresponding to the pixel area and spaced apart from each other by a metal-free grid pattern.
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公开(公告)号:US20230361142A1
公开(公告)日:2023-11-09
申请号:US18170652
申请日:2023-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeyeon PARK , Hyungkeun GWEON , Bumsuk KIM , Jieun KIM , Keo-Sung PARK , Yun Ki LEE , Hajin LIM , Taeksoo JEON , Jaesung HUR
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14627 , H01L27/14636 , H01L27/14621
Abstract: Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.
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公开(公告)号:US20230017043A1
公开(公告)日:2023-01-19
申请号:US17746042
申请日:2022-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeyeon PARK , Yunki LEE , Jinwoong NAMGOONG , Hyunseok SONG , Hyungkeun GWEON , Bumsuk KIM
IPC: H01L27/146 , G02B5/20 , G02B3/00
Abstract: Provided is an image sensor including a light sensing element, a planarization layer disposed on the light sensing element, a color filter array layer disposed on the planarization layer, the color filter array layer including color filters, and a microlens disposed on the color filter array layer, wherein the color filters include a green filter, a blue filter and a red filter, and wherein a refractive index of the green filter is greater than 1.7 for a green light wavelength range of 500 nm to 570 nm.
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