公开(公告)号：US20030066826A1

公开(公告)日：2003-04-10

申请号：US10264482

申请日：2002-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Won Lee ,  Do-In Bae ,  Sang-Yeoul Lee

IPC: H05B003/68

CPC classification number: H01L21/67103 ,  H05B3/72

Abstract: An apparatus for heating a substrate of a semiconductor device includes a hot plate, on which a semiconductor substrate is placed, and a heater for heating the hot plate. The hot plate is preferably a composite plate including a plurality of plates having different thermal conductivities from each other. For example, a first plate adjacent to the heater can be made of aluminum, which has a relatively high thermal conductivity. A second plate, laminated on top of the first plate, can be made of titanium or stainless steel, which both have a thermal conductivity lower than aluminum. A composite hot plate as disclosed herein is better able to maintain a constant temperature and a uniform temperature distribution in order to more uniformly heat a substrate and to reduce an amount of energy required for the heating process. In addition, the reliability and productivity of the semiconductor device manufactured by the apparatus can be improved.

Abstract translation: 用于加热半导体器件的衬底的装置包括其上放置半导体衬底的加热板和用于加热热板的加热器。 热板优选为包括彼此具有不同热导率的多个板的复合板。 例如，与加热器相邻的第一板可以由铝制成，其具有相对较高的热导率。 层压在第一板顶部的第二板可以由钛或不锈钢制成，它们都具有比铝低的导热性。 如本文所公开的复合热板更能够保持恒定的温度和均匀的温度分布，以便更均匀地加热基底并减少加热过程所需的能量。 此外，可以提高由该装置制造的半导体器件的可靠性和生产率。

公开(公告)号：US20030122326A1

公开(公告)日：2003-07-03

申请号：US10315230

申请日：2002-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Won Lee ,  Do-In Bae ,  Guk-Kwang Kim ,  Wan-Goo Hwang ,  Jaung-Joo Kim

IPC: F16J015/10

CPC classification number: F16J15/0806 ,  F05C2201/021 ,  F05C2201/0412 ,  F05C2201/0475

Abstract: A metal gasket for a semiconductor fabrication chamber capable of preventing base plate metal contamination in the chamber, wherein the metal gasket includes a diffusion barrier layer interposed between a base plate and an anti-corrosive coating layer, and wherein the diffusion barrier layer prevents elements of the base plate from being diffused to the anti-corrosive coating layer. Accordingly, the diffusion barrier layer prevents attack on the anti-corrosive coating layer.

Abstract translation: 一种用于半导体制造室的金属衬垫，其能够防止腔室中的底板金属污染，其中金属衬垫包括介于基板和防腐蚀涂层之间的扩散阻挡层，并且其中扩散阻挡层防止 基板被扩散到防腐蚀涂层。 因此，扩散阻挡层防止对防腐蚀涂层的侵蚀。