公开(公告)号：US09704690B2

公开(公告)日：2017-07-11

申请号：US14799588

申请日：2015-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moojin Kim ,  Bongseong Kim ,  Unjoo Lee

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32706 ,  H01J37/32972

Abstract: A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.