公开(公告)号：US11842884B2

公开(公告)日：2023-12-12

申请号：US17692880

申请日：2022-03-11

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32412 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32706 ,  H01J37/32935 ,  H01L21/67109

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20230395354A1

公开(公告)日：2023-12-07

申请号：US18450635

申请日：2023-08-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32174 ,  H01J37/32477 ,  H01L21/67109 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32706

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US11664233B2

公开(公告)日：2023-05-30

申请号：US17386892

申请日：2021-07-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Tomoyuki Tamura ,  Kazuyuki Ikenaga

IPC: H01L21/3065 ,  H01L21/32 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US20190051497A1

公开(公告)日：2019-02-14

申请号：US16162769

申请日：2018-10-17

Applicant: LAM RESEARCH CORPORATION

Inventor： Maolin Long ,  John Drewery ,  Alex Paterson

IPC: H01J37/32 ,  G01R15/04 ,  G01R15/26 ,  G01R19/00

CPC classification number: H01J37/32183 ,  G01R15/04 ,  G01R15/06 ,  G01R15/26 ,  G01R19/0061 ,  G01R19/0084 ,  H01J37/32155 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/332 ,  H01J2237/334

Abstract: A voltage sensor for a substrate processing system is provided. The voltage sensor includes a terminal, a first channel, and a second channel. The terminal connects to a pickup device of a substrate support in the substrate processing system. The first channel is configured to detect, at the pickup device, first radio frequency voltages in a first voltage range. The first channel includes a first voltage divider. The first voltage divider is connected to the terminal and is configured to output a first reduced voltage representative of a detected one of the first radio frequency voltages. The second channel is configured to detect, at the pickup device, second radio frequency voltages in a second voltage range. The second channel includes a second voltage divider. The second voltage divider is connected to the terminal and is configured to output a second reduced voltage representative of a detected one of the second radio frequency voltages. The second voltage range is different than the first voltage range.

公开(公告)号：US20180145086A1

公开(公告)日：2018-05-24

申请号：US15661243

申请日：2017-07-27

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kaori NARUMIYA ,  Hisataka HAYASHI ,  Keisuke KIKUTANI ,  Akio UI ,  Yosuke SATO

IPC: H01L27/11582 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L27/11582 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L27/1157 ,  H01L27/11575

Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.

公开(公告)号：US20180135165A1

公开(公告)日：2018-05-17

申请号：US15315683

申请日：2015-06-24

Applicant: BIOTRONIK AG

Inventor： Christian Schwarz ,  Enrico Buchholz ,  Carsten Momma

IPC: C23C16/02 ,  C23C16/32 ,  C23C16/458 ,  C23C16/517 ,  H01J37/32

CPC classification number: C23C16/0245 ,  C23C16/0272 ,  C23C16/325 ,  C23C16/458 ,  C23C16/50 ,  C23C16/517 ,  H01J37/32366 ,  H01J37/32403 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32706 ,  H01J37/32715

Abstract: The invention relates to a method for the plasma treatment of an endoprosthesis having base body. The method includes inserting the base body into a vacuum chamber; executing a cleaning step with a plasma treatment of a surface of the base body that is to be coated; executing a treatment step in a plasma of the surface of the base body that is to be coated, wherein ions out of the plasma are implanted into an area of the base body that is close to the surface.

公开(公告)号：US09875881B2

公开(公告)日：2018-01-23

申请号：US14183723

申请日：2014-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi Nagami ,  Norikazu Yamada ,  Tadashi Gondai ,  Kouichi Yoshida

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32706 ,  H01J37/32944

Abstract: At a first timing after mounting a semiconductor wafer W on an electrostatic chuck 38, a susceptor 12 is switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power HF for plasma generation is applied to the susceptor 12, and a processing gas is excited into plasma in a chamber 10. From a third timing after the second timing, a first high frequency power LF for ion attraction is applied to the susceptor 12, and a self-bias (−Vdc) is generated. From a fourth timing close to the third timing, a negative second DC voltage −BDC corresponding to the self-bias (−Vdc) is applied to the susceptor 12. From the fifth timing after the fourth timing, a positive first DC voltage ADC is applied to an inner electrode 42 of the electrostatic chuck 38.

公开(公告)号：US20170358431A1

公开(公告)日：2017-12-14

申请号：US15618082

申请日：2017-06-08

Applicant: APPLIED MATERIALS, INC.

Inventor： LEONID DORF ,  JAMES HUGH ROGERS ,  OLIVIER LUERE ,  TRAVIS KOH ,  RAJINDER DHINDSA ,  SUNIL SRINIVASAN

IPC: H01J37/32

CPC classification number: H01J37/32706 ,  H01J37/32146 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334

Abstract: Systems and methods for controlling a voltage waveform at a substrate during plasma processing include applying a shaped pulse bias waveform to a substrate support, the substrate support including an electrostatic chuck, a chucking pole, a substrate support surface and an electrode separated from the substrate support surface by a layer of dielectric material. The systems and methods further include capturing a voltage representative of a voltage at a substrate positioned on the substrate support surface and iteratively adjusting the shaped pulse bias waveform based on the captured signal. In a plasma processing system a thickness and a composition of a layer of dielectric material separating the electrode and the substrate support surface can be selected such that a capacitance between the electrode and the substrate support surface is at least an order of magnitude greater than a capacitance between the substrate support surface and a plasma surface.

公开(公告)号：US20170347442A1

公开(公告)日：2017-11-30

申请号：US15603648

申请日：2017-05-24

Applicant: Tokyo Electron Limited

Inventor： Yoshinori SUZUKI ,  Akitoshi HARADA

IPC: H05H1/46

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32715

Abstract: A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.

公开(公告)号：US09831112B2

公开(公告)日：2017-11-28

申请号：US14534246

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Shingo Koiwa

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32724 ,  H01J37/32834 ,  H01J37/32844 ,  H01L21/3065 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6838 ,  Y02C20/30 ,  Y02P70/605

Abstract: A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.