公开(公告)号：US20220199162A1

公开(公告)日：2022-06-23

申请号：US17378202

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUHWAN KIM ,  KYUNGDUK LEE

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/32 ,  G11C16/26 ,  G06F12/02

Abstract: An operating method of a storage device includes monitoring a temperature of a nonvolatile memory device including a plurality of memory blocks, receiving a first request from a host, in response to the first request, transmitting a first command to the nonvolatile memory device when a first memory block corresponding to the first request is exposed at a temperature of a threshold temperature or higher for a first time period that is equal to or greater than a threshold time period and a second command to the nonvolatile memory device when the first memory block is exposed at a temperature lower than the threshold temperature for the threshold time period, charging word lines of the first memory block with a driving voltage in response to the first command, and performing a first operation corresponding to the first request in response to the first command or the second command.