公开(公告)号：US20250126778A1

公开(公告)日：2025-04-17

申请号：US18768579

申请日：2024-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmin Lee ,  Yeonjin Hwang ,  Munjun Kim ,  Iksoo Kim ,  Junwon Lee ,  Younseok Choi

IPC: H10B12/00

Abstract: An integrated circuit device and a method of manufacturing the same are provided. The integrated circuit device includes: a substrate having a plurality of active regions; a bit line extending on the substrate in a horizontal direction parallel to an upper surface of the substrate; a direct contact electrically connected to a first active region of the plurality of active regions and connected to the bit line; a contact plug electrically connected to a second active region of the plurality of active regions adjacent to the first active region; and an outer insulation spacer between the bit line and the contact plug and overlapping the bit line in a vertical direction perpendicular to the upper surface of the substrate. The outer insulation spacer includes a doped region doped with a metal element.