公开(公告)号：US12199043B2

公开(公告)日：2025-01-14

申请号：US17412408

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geun Won Lim ,  Beyoung Hyun Koh ,  Yong Jin Kwon ,  Joong Shik Shin

IPC: H01L23/535 ,  H01L21/768 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11582 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor memory device may include a mold structure that includes mold insulation films and gate electrodes alternately stacked on a first substrate, a channel structure that penetrates the mold structure and intersects the gate electrodes, a block separation region that extends in a first direction parallel to an upper surface of the first substrate and cuts the mold structure, a first dam region and a second dam region spaced apart from each other, that each having a closed loop in a plan view and each cutting the mold structure, pad insulation films in the first and second dam regions that are alternately stacked with the mold insulation films and include a material different from the mold insulation films, and a through via which penetrates through the first substrate, the mold insulation films, and the pad insulation films, in the first dam region but not in the second dam region.

公开(公告)号：US20220189876A1

公开(公告)日：2022-06-16

申请号：US17412408

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geun Won Lim ,  Beyoung Hyun Koh ,  Yong Jin Kwon ,  Joong Shik Shin

IPC: H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573 ,  H01L21/768

Abstract: A semiconductor memory device may include a mold structure that includes mold insulation films and gate electrodes alternately stacked on a first substrate, a channel structure that penetrates the mold structure and intersects the gate electrodes, a block separation region that extends in a first direction parallel to an upper surface of the first substrate and cuts the mold structure, a first dam region and a second dam region spaced apart from each other, that each having a closed loop in a plan view and each cutting the mold structure, pad insulation films in the first and second dam regions that are alternately stacked with the mold insulation films and include a material different from the mold insulation films, and a through via which penetrates through the first substrate, the mold insulation films, and the pad insulation films, in the first dam region but not in the second dam region.

公开(公告)号：US20250105155A1

公开(公告)日：2025-03-27

申请号：US18976693

申请日：2024-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geun Won Lim ,  Beyoung Hyun Koh ,  Yong Jin Kwon ,  Joong Shik Shin

IPC: H01L23/535 ,  H01L21/768 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor memory device may include a mold structure that includes mold insulation films and gate electrodes alternately stacked on a first substrate, a channel structure that penetrates the mold structure and intersects the gate electrodes, a block separation region that extends in a first direction parallel to an upper surface of the first substrate and cuts the mold structure, a first dam region and a second dam region spaced apart from each other, that each having a closed loop in a plan view and each cutting the mold structure, pad insulation films in the first and second dam regions that are alternately stacked with the mold insulation films and include a material different from the mold insulation films, and a through via which penetrates through the first substrate, the mold insulation films, and the pad insulation films, in the first dam region but not in the second dam region.