Abstract:
A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.
Abstract:
Provided is a vacuum adsorption apparatus and a method of adsorbing a semiconductor package in a vacuum state. The vacuum adsorption apparatus includes a housing having an opening formed on its top surface, a vacuum adsorption unit disposed in the housing, and a stage formed on the opening formed in the housing and including a plurality of holes. A pressure generated from the vacuum adsorption unit is applied to the top surface of the stage through the opening and the plurality of holes.