公开(公告)号：US11004889B2

公开(公告)日：2021-05-11

申请号：US16658855

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Su Park ,  Kwansik Kim ,  Yoonkyoung Kim ,  Changhwa Kim ,  Mangeun Cho ,  Hyungi Hong

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/223 ,  H01L21/225

Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.

公开(公告)号：US20200219928A1

公开(公告)日：2020-07-09

申请号：US16658855

申请日：2019-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-SU PARK ,  Kwansik Kim ,  Yoonkyoung Kim ,  Changhwa Kim ,  Mangeun Cho ,  Hyungi Hong

IPC: H01L27/146 ,  H01L21/223 ,  H01L21/762

Abstract: A method of fabricating an image sensor is provided. The method includes comprises forming a deep trench in a semiconductor substrate, performing a first plasma doping process to form a first impurity region a portion of in the semiconductor substrate adjacent to inner sidewalls and a bottom surface of the deep trench, the first impurity region being doped with first impurities of a first conductivity type, and performing an annealing process to diffuse the first impurities from the first impurity region into the semiconductor substrate to form a photoelectric conversion part.