公开(公告)号：US20230035916A1

公开(公告)日：2023-02-02

申请号：US17653390

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tea Won Kim ,  Hyung Joon Kim ,  Yong-Suk Tak ,  Yu Rim Kim ,  Kong Soo Lee

IPC: H01L29/786

Abstract: A semiconductor device includes a conductive line that extends in a first direction on a substrate, a first oxide semiconductor layer, including a first crystalline oxide semiconductor material containing a first metal element, on the conductive line, a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line, a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer, and a capacitor structure connected to the second oxide semiconductor layer on the second oxide semiconductor layer and the gate electrode, wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.