公开(公告)号：US20250046629A1

公开(公告)日：2025-02-06

申请号：US18587026

申请日：2024-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geun Young YEOM ,  Jin Woo PARK ,  Sang Wuk PARK ,  Yun A LEE ,  Chan Mi LEE ,  Sang Gyo CHUNG ,  Yun Jong JANG ,  Hae In KWON ,  Hong Seong GIL ,  Doo San KIM

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

Abstract: An ion beam etching apparatus comprising a plasma chamber, a plasma source disposed on top of the plasma chamber and configured to generate plasma, a process chamber defining a treating area where a substrate is treated, a grid structure disposed between the process chamber and the plasma chamber, wherein the grid structure receives the plasma, and supplies ions or radicals toward the substrate, a discharge line connected to the grid structure, and a first pumping system connected to the discharge line, wherein particles or polymers within the grid structure are discharged through the discharge line.